2SK3656 2007-11-01 1 toshiba field effect transisto r silicon n channel mos type 2SK3656 vhf- and uhf-band amplif ier applications (note)the toshiba products listed in this document are intended for high frequency power amplifier of telecommunications equipment.these toshiba products are neither in tended nor warranted for any other use.do not use these toshiba products listed in this document except for high frequency power amplifier of telecommunications equipment. ? output power: p o =28.4dbmw (typ) ? gain: g p = 15.4db (typ) ? drain efficiency: d = 64% (typ) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 7.5 v gain-source voltage v gss (note 1) 3.5 v drain current i d 0.5 a power dissipation p d (note 2) 3 w channel temperature t ch 150 c storage temperature range t stg ? 45~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/v oltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: operating ranges: 0~3.5v note 2: tc = 25c (when mounted on a 1.6 mm glass epoxy pcb) marking caution: this device is sensitive to electrostatic discharge. please make enough tool and equipment earthed when you handle. unit: mm jedec ? jeita sc-62 toshiba 2-5k1d weight: 0.05 g (typ.) 1 w c 2 3 1. gate 2. source 3. drain a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) lot no.
2SK3656 2007-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit output power p o 27.5 28.4 ? dbmw drain efficiency d 50 64 ? % power gain g p v ds = 3.6 v, i idle = 50 ma (v gs = adjust), f = 470 mhz, p i = 13dbmw, ? 15.4 ? db threshold voltage v th v ds = 3.6 v, i d =0.5 ma 0.2 ? 1.2 v drain cut-off current i dss v ds = 7.5 v, v gs = 0 v ? ? 10 a gate-source leakage current i gss v gs = 3.5 v, v ds = 0 v ? ? 5 a load mismatch (note 3) ? v ds = 3.6 v, f = 470 mhz, p i = 13dbmw, p o = 27dbmw (v gs = adjust), vswr load 10:1 all phase no degradation ? note 3: these characteristic values are measured using measurement tools specified by toshiba. output power test fixture (test condition: f = 470 mhz, v ds = 3.6 v, i idle = 50 ma, p i = 13 dbmw) p i p o c1 c2 c6 z g = 50 c10 l2 c8 l1 r1 v gs v ds c4 c5 c7 z l = 50 c1: 7 pf c2: 10 pf c3: 5 pf c4: 13 pf c5: 8 pf c6: 2200 pf c7: 2200 pf c8: 10000 pf c9: 2200 pf c10: 10000 pf l1: 0.6 mm enamel wire, 5.5id, 5t l2: 0.6 mm enamel wire, 5.5id, 7t r1: 6.8 k r2: 56 c3 c9 r2
2SK3656 2007-11-01 3 po-pi 0 5 10 15 20 25 30 35 40 -10-50 5101520 input power pi(dbmw) output power po(dbmw) iidle=30ma iidle=50ma iidle=70ma f =470mhz vdd=3.6v po-pi 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 input power pi(dbmw) output power po(dbmw) vdd=3.0v vdd=3.6v vdd=4.2v f =470mhz iidle=50ma gp, d -iidle 10 12 14 16 18 20 0 20406080100 gate idle current iidle(ma) power gain gp(db) 60 64 68 72 76 80 drain efficiency d(%) gp (db) (% ) f =470mhz pi=13dbmw vdd=3.6v po, gp, d -pi 0 5 10 15 20 25 30 35 40 -10-5 0 5 1015 20 input power pi(dbmw) output power po(dbmw) power gain gp(db) 0 10 20 30 40 50 60 70 80 drain efficiency d(%) po (dbmw) gp (db) (%) f =470mhz iidle=50ma vdd=3.6v pi-idd 0 50 100 150 200 250 300 350 -10-5 0 5 10 1520 input power pi(dbmw) drain current idd(ma) iidle=30ma iidle=50ma iidle=70ma f =470mhz vdd=3.6v gp, d -vdd 10 12 14 16 18 20 22.533.544.55 drain voltage vdd(v) power gain gp(db) 50 60 70 80 90 100 drain efficiency d(%) gp (db) (%) f =470mhz iidle=50ma pi=13dbmw
2SK3656 2007-11-01 4 note 4: these are only typical curves and devices are not necessarily guaranteed at these curves. pi-idd 0 50 100 150 200 250 300 350 400 -10 -5 0 5 10 15 20 input power pi(dbmw) drain current idd(ma) vdd=3.0v vdd=3.6v vdd=4.2v f =470mhz iidle=50ma
2SK3656 2007-11-01 5 . restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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